AUTOSTOICHIOMETRIC VAPOR-DEPOSITION III - A STUDY OF STOICHIOMETRY AND CHARACTERIZATION OF EPITAXIAL LITAO3 LAYER

The effect of precursor vapor pressure on LiNbO3 and LiTaO3 film stoic hiometry is compared for single and double alkoxides. Stoichiometric e vaporation can be achieved in an appropriate temperature and pressure range according to the precursor sublimate composition analysis. The d eposited LiTaO3 films from LiTa(1-OC4H9)(6) were stoichiometric and ep itaxial when a lattice-matched single-crystal substrate nias used. The stoichiometry of the film was assessed by Rutherford backscattering a nd precision lattice parameter measurements. The high quality of the e pitaxial layer was confirmed by high-resolution double-and triple-axes X-ray diffraction.