TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF STRAINED-LAYER INGAASP INP HETEROSTRUCTURES/

Authors
FANCEY SJ BULLER GS MASSA JS WALKER AC PERRIN SD DANN AJ ROBERTSON MJ
Citation
Sj. Fancey et al., TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF STRAINED-LAYER INGAASP INP HETEROSTRUCTURES/, Journal of crystal growth, 183(1-2), 1998, pp. 269-273
Citations number
14
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
183
Issue
1-2
Year of publication
1998
Pages
269 - 273
Database
ISI
SICI code
0022-0248(1998)183:1-2<269:TPSOSI>2.0.ZU;2-5
Abstract
A time-resolved photoluminescence study of strained and unstrained InG aAsP/InP double heterostructures has been performed at low photogenera ted carrier densities (i.e. less than or equal to 10(16) cm(-3)) using a novel high-efficiency germanium photon-counting detector. The photo luminescence decay times are observed to decrease with increasing stra in. Samples grown on substrates with lattice orientation (311)B are sh own to have shorter excess carrier lifetimes than those grown on latti ces orientated (001) or (311)A.