ROLE OF HYDROGEN DURING RAPID VAPOR-PHASE DOPING ANALYZED BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND FOURIER-TRANSFORM INFRARED-ATTENUATED TOTAL-REFLECTION

Citation
Y. Kiyota et al., ROLE OF HYDROGEN DURING RAPID VAPOR-PHASE DOPING ANALYZED BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND FOURIER-TRANSFORM INFRARED-ATTENUATED TOTAL-REFLECTION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 1-5
Citations number
17
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
07342101
Volume
16
Issue
1
Year of publication
1998
Pages
1 - 5
Database
ISI
SICI code
0734-2101(1998)16:1<1:ROHDRV>2.0.ZU;2-7
Abstract
The surface of boron-doped layers formed by rapid vapor-phase doping w as analyzed by x-ray photoelectron spectroscopy (XPS) and Fourier-tran sform infrared-attenuated total reflection (FTIR-ATR), to determine th e role of the hydrogen carrier gas. Boron doping was carried out with a B2H6 source gas and a hydrogen carrier gas at 800 and 900 degrees C. A nitrogen carrier gas was also used for comparison. Using hydrogen c arrier gas, no evidence of boron segregation was observed in the XPS s pectra. FTIR-ATR analysis confirmed that the hydrogen termination of t he surface was maintained during doping. Using nitrogen carrier gas, l ayers that included segregated boron and silicon nitride were produced on the surface, which led to poor controllability of the boron concen tration. When a hydrogen carrier gas is used, the hydrogen termination should promote the surface migration of adsorbed species. The hydroge n carrier gas plays an important role in terminating the silicon dangl ing bonds, thus preventing excessive chemisorption of boron. (C) 1998 American Vacuum Society.