ROLE OF HYDROGEN DURING RAPID VAPOR-PHASE DOPING ANALYZED BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND FOURIER-TRANSFORM INFRARED-ATTENUATED TOTAL-REFLECTION
Y. Kiyota et al., ROLE OF HYDROGEN DURING RAPID VAPOR-PHASE DOPING ANALYZED BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND FOURIER-TRANSFORM INFRARED-ATTENUATED TOTAL-REFLECTION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 1-5
Citations number
17
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
The surface of boron-doped layers formed by rapid vapor-phase doping w
as analyzed by x-ray photoelectron spectroscopy (XPS) and Fourier-tran
sform infrared-attenuated total reflection (FTIR-ATR), to determine th
e role of the hydrogen carrier gas. Boron doping was carried out with
a B2H6 source gas and a hydrogen carrier gas at 800 and 900 degrees C.
A nitrogen carrier gas was also used for comparison. Using hydrogen c
arrier gas, no evidence of boron segregation was observed in the XPS s
pectra. FTIR-ATR analysis confirmed that the hydrogen termination of t
he surface was maintained during doping. Using nitrogen carrier gas, l
ayers that included segregated boron and silicon nitride were produced
on the surface, which led to poor controllability of the boron concen
tration. When a hydrogen carrier gas is used, the hydrogen termination
should promote the surface migration of adsorbed species. The hydroge
n carrier gas plays an important role in terminating the silicon dangl
ing bonds, thus preventing excessive chemisorption of boron. (C) 1998
American Vacuum Society.