J. Matsui et al., ELECTRON-TRANSPORT TO A SUBSTRATE IN A RADIO-FREQUENCY CAPACITIVELY COUPLED PLASMA BY THE BOLTZMANN-EQUATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 294-299
Citations number
16
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Anomalous etching, caused by the local charging of a patterned wafer s
urface immersed in a plasma, is one of the obstacles which must be ove
rcome in plasma processing. We have developed a quantitative argument
for the potential control of both the fluxes and the velocity componen
ts of charged particles on the wafer in a pulsed radio frequency plasm
a with a short off-cycle in SF6. We have then used relaxation continuu
m/Boltzmann equation model to create a phase-space model. (C) 1998 Ame
rican Vacuum Society.