ELECTRICAL CHARACTERIZATION OF SINGLE BARRIER GAAS GAN/GAAS HETEROSTRUCTURES/

Authors
HUANG X CHENG TS HOOPER SE FOSTER TJ JENKINS LC WANG J FOXON CT ORTON JW EAVES L MAIN PC
Citation
X. Huang et al., ELECTRICAL CHARACTERIZATION OF SINGLE BARRIER GAAS GAN/GAAS HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1582-1584
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
4
Year of publication
1995
Pages
1582 - 1584
Database
ISI
SICI code
1071-1023(1995)13:4<1582:ECOSBG>2.0.ZU;2-5
Abstract
A modified molecular beam epitaxy technique has been used to grow sing le barrier GaAs/GaN/GaAs heterostructures of both n- and p-type. The t emperature-dependent I(V) measurements show thermally activated conduc tion over the barrier above about 200 K. A Type I band alignment is in dicated by significant offsets in both the conduction and valence band s at the GaAs/GaN heterointerface. (C) 1995 American Vacuum Society.