EFFECTS OF GROWTH TEMPERATURE ON THE SIO2 SI(100) INTERFACE STRUCTURE/

Synchrotron radiation photoemission spectroscopy (PES) has been used t o study thermal SiO2/Si(100) interfaces. Oxides were grown at 700, 800 , 900, and 1000 degrees C and etched back to a thickness similar to 0. 5-1.5 nm for PES measurements. Comparison of Si 2p core levels with in situ ultrahigh vacuum-grown SiO2 on Si(100) indicated that various Si oxidation states, Si-x+, are present at the interface. The results sh ow that the amount of both Si2+ and Si3+ increases with increasing oxi dation temperature while the amount of Si1+ remains constant. For thes e furnace grown oxides, structural relaxation to relieve strains rathe r than kinetic growth considerations governs the structure and suboxid e distribution at the SiO2/Si(100) interface. (C) 1995 American Vacuum Society.