SURFACE-ROUGHNESS AND PATTERN-FORMATION DURING HOMOEPITAXIAL GROWTH OF GE(001) AT LOW-TEMPERATURES

Authors
VANNOSTRAND JE CHEY SJ CAHILL DG
Citation
Je. Vannostrand et al., SURFACE-ROUGHNESS AND PATTERN-FORMATION DURING HOMOEPITAXIAL GROWTH OF GE(001) AT LOW-TEMPERATURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1816-1819
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
4
Year of publication
1995
Pages
1816 - 1819
Database
ISI
SICI code
1071-1023(1995)13:4<1816:SAPDHG>2.0.ZU;2-C
Abstract
The evolution of surface roughness during growth of Ge(001) by molecul ar beam epitaxy at 155 degrees C is characterized using in situ scanni ng tunneling microscopy. The range of film thickness studied spans mor e than three orders of magnitude, 0.1-200 nm. Beginning at a film thic kness near 100 nm, a periodic pattern of growth mounds is observed. Th e average in-plane separation of growth features d evolves continuousl y with film thickness t, following a power law d=t(0.42). The vertical roughness of the film does not follow a single power-law behavior ove r this range of film thickness. (C) 1995 American Vacuum Society.