GIANT ISOTOPE EFFECT IN HOT-ELECTRON DEGRADATION OF METAL-OXIDE-SILICON DEVICES

A giant isotope effect of hot electron degradation was found by anneal ing and passivating integrated circuits of recent complementary metal oxide silicon (CMOS) technology with deuterium instead of hydrogen. In this paper, we summarize our experience and present new results of se condary ion mass spectroscopy that correlate deuterium accumulation wi th reduced hot electron degradation. We also present a first account o f the physical theory of this effect with a view on engineering applic ation and point toward rules of current and voltage scaling as obtaine d from this theory.