EFFECTS OF NITROGEN IMPLANT ACTIVATION ON THE SIC SIO2 INTERFACE OF 6H-SIC SELF-ALIGNED NMOSFETS/

Authors
LAM MP DAS MK PAN JN KORNEGAY KT COOPER JA MELLOCH MR
Citation
Mp. Lam et al., EFFECTS OF NITROGEN IMPLANT ACTIVATION ON THE SIC SIO2 INTERFACE OF 6H-SIC SELF-ALIGNED NMOSFETS/, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 565-567
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
2
Year of publication
1998
Pages
565 - 567
Database
ISI
SICI code
0018-9383(1998)45:2<565:EONIAO>2.0.ZU;2-0
Abstract
The implant anneal process for 6H-SiC self-aligned NMOS transistors wi ll degrade the SiO2/SiC interface. The interface is of great concern b ecause it reduces the performance of MOS transistors. The effect of an neal time and temperature on the effective oxide charge and interface state density is presented. The optimal anneal for self-aligned NMOS t ransistors is obtained by choosing the anneal condition with the highe st implant activation that causes the least damage to the interface.