Pjcm. Vanhoof et al., CHANGE OF MORPHOLOGY AND GROWTH-MECHANISM OF THIN N-PARAFFIN CRYSTALSINDUCED BY HOMOLOGOUS IMPURITIES, Journal of crystal growth, 183(4), 1998, pp. 641-652
In situ optical and birefringence measurements were applied in observi
ng the crystallisation of very thin (greater than or equal to 1.1 mu m
) n-paraffin crystals. Next, homologue impurities were found to reduce
the crystal thickness even further to approximately 0.4 mu m. As such
thin crystals are very sensitive to adsorption of (sub-) micron parti
cles (e.g. dust particles) a new type of growth, i.e. ''particle-induc
ed rough growth'', is induced. This growth is akin to the growth of st
eps in the presence of immobile impurities adsorbed on the surface. Th
e measured mean distance between the obstructing (sub-) micron particl
es (12 mu m) is used to calculate the surface energy (36 mJ/m(2)) of t
he top and bottom faces of the n-paraffin crystals. And it was shown t
hat this is a reasonable value for the surface energy of {001} faces o
f n-paraffin crystals. Further, it was shown that at fixed concentrati
ons the saturation temperatures for thin crystals are different from t
hose for thick crystals. These results can be explained in terms of a
Gibbs-Thomson effect. (C) 1998 Elsevier Science B.V. All rights reserv
ed.