ANNEALING BEHAVIOR OF INAS GAAS QUANTUM-DOT STRUCTURES/

We investigate the annealing behavior of InAs layers with different th icknesses in a GaAs matrix. The diffusion enhancement by strain, which is well established in strained quantum wells, occurs in InAs/GaAs qu antum dots (QDs). A shift of the QD luminescence peak toward higher en ergies results from this enhanced diffusion. In the case of structures where a significant portion of the strain is relaxed by dislocations, the interdiffusion becomes negligible, and there is a propensity to g enerate additional dislocations. This results in a decrease of the QD luminescence intensity, and the QD peak energy is weakly affected.