RT LASING VIA NANOSCALE CDSE ISLANDS IN A (ZN,MG)(S,SE) MATRIX

New approach for high performance lasing in semiconductors using an ef fect of exciton-induced waveguiding is proposed and realized. We demon strate RT lasing in a structure without external waveguide formed by c ladding of an active region with wider bandgap layers. Stacked arrays of nanoscale CdSe islands inserted directly in a wide bandgap matrix a re used as an active media in our case. The lasing wavelength is 460 n m (2.69 eV) at 300K while the bandgap of the matrix material is 2.86 e V, providing an ultimate shift toward blue spectral range for the same matrix material.