ZNSE HETEROEPITAXY ON GAAS(110) SUBSTRATE

ZnSe heteroepitaxial layers have been grown on GaAs (100), (110) on ax is, and (110) 6 degrees miscut substrates by molecular beam epitaxy. Z nSe on GaAs (110) shows smooth and featureless spectra from Rutherford backscattering channeling measurements taken along major crystalline directions, whereas ZnSe on GaAs (100) without pre-growth treatments e xhibit large interface disorder in channeling spectra. ZnSe films grow n on GaAs (110) on axis show facet formation over a wide range of grow th conditions. The use of (110) 6 degrees miscut substrates is shown t o suppress facet formation; and under the correct growth conditions, f acet-free surfaces are achieved. Etch pit density measurements give di slocation densities for ZnSe epitaxial layers grown on GaAs (100), (11 0) on axis, and (110) 6 degrees miscut substrates of 10(7)/cm(2), 3 x 10(5)/cm(2) and 5 x 10(4)/cm(2), respectively. These results suggest t hat with further improvements to ZnSe growth on GaAs (110)-off substra tes it may be possible to fabricate defect free ZnSe based laser devic es.