SILICIDES AND OHMIC CONTACTS

Silicides and ohmic contacts are an interesting and important part of integrated circuit technology. The integration of silicides and ohmic contacts in advanced CMOS devices uses knowledge from many different f ields; solid state physics for the electrical properties of the contac ts, materials science for solid state reactions, oxidation and dopant interactions, wet chemistry for patterning, and plasma chemistry and p hysics for patterning and deposition. This paper gives an overview of the scientific and technological aspects of silicides and ohmic contac ts, including the electrical properties of metal-Si contacts, metal an d silicide deposition techniques, metal-Si reactions, silicide pattern ing processes, silicide stability, and device degradation due to silic ides. We focus on silicides and ohmic contacts used in advanced CMOS d evices, including NiSi, TiSi2 and CoSi2 salicides, WSi2 and TiSi2 poly cides, and W studs. (C) 1998 Elsevier Science S.A.