The axial and radial (k(Ge) much less than 1) distributions of Ge in C
dTe crystals grown by vertical directional solidification from melts c
ontaining less than or equal to 1 at. % Ge were studied by autoradiogr
aphy, infrared microscopy, scanning electron microscopy, and electron-
probe x-ray microanalysis. Three types of IR-opaque inclusions contain
ing Te and predominantly Ge are identified, and the mechanisms of thei
r formation are discussed.