IMPURITY PRECIPITATION IN GE-DOPED CDTE CRYSTALS

The axial and radial (k(Ge) much less than 1) distributions of Ge in C dTe crystals grown by vertical directional solidification from melts c ontaining less than or equal to 1 at. % Ge were studied by autoradiogr aphy, infrared microscopy, scanning electron microscopy, and electron- probe x-ray microanalysis. Three types of IR-opaque inclusions contain ing Te and predominantly Ge are identified, and the mechanisms of thei r formation are discussed.