GROWTH OF YSZ FILMS ON SI SUBSTRATES

The effect of the rf bias applied to the Si (100) substrate on the ori entation of YSZ films produced by magnetron sputtering was investigate d. YSZ films with a strong (100) or (111) texture, depending on deposi tion conditions and rf bias, were grown at a substrate temperature of about 50 degrees C. The dependence of film orientation on the substrat e temperature was examined. Our results give grounds to expect that lo w-temperature epitaxy of YSZ on Si is possible under certain condition s.