ELECTROLUMINESCENCE FROM ZNSTE-AL ALLOY AND AN INVESTIGATION OF LOCALCURRENT DISTRIBUTIONS BY CONDUCTING ATOMIC-FORCE MICROSCOPY

Citation
Jm. Mao et al., ELECTROLUMINESCENCE FROM ZNSTE-AL ALLOY AND AN INVESTIGATION OF LOCALCURRENT DISTRIBUTIONS BY CONDUCTING ATOMIC-FORCE MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 14-18
Citations number
15
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
1
Year of publication
1998
Pages
14 - 18
Database
ISI
SICI code
1071-1023(1998)16:1<14:EFZAAA>2.0.ZU;2-8
Abstract
Electroluminescent devices have been fabricated by depositing Al-doped ZnSTe onto GaAs substrates by molecular beam epitaxy. A moderately br ight blue-light emission was observed at room temperature. Electrolumi nescence spectra reveal that light emission is mostly from impact exci tation of Te Isoelectronic centers in these structures. Surface morpho logies and concurrent current images by using conducting atomic force microscopy indicate electrical inhomogeneity in such structures. Nonun iform light emission may be inferred from nonuniform current distribut ions on the submicrometer scale. (C) 1998 American Vacuum Society.