Jm. Mao et al., ELECTROLUMINESCENCE FROM ZNSTE-AL ALLOY AND AN INVESTIGATION OF LOCALCURRENT DISTRIBUTIONS BY CONDUCTING ATOMIC-FORCE MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 14-18
Electroluminescent devices have been fabricated by depositing Al-doped
ZnSTe onto GaAs substrates by molecular beam epitaxy. A moderately br
ight blue-light emission was observed at room temperature. Electrolumi
nescence spectra reveal that light emission is mostly from impact exci
tation of Te Isoelectronic centers in these structures. Surface morpho
logies and concurrent current images by using conducting atomic force
microscopy indicate electrical inhomogeneity in such structures. Nonun
iform light emission may be inferred from nonuniform current distribut
ions on the submicrometer scale. (C) 1998 American Vacuum Society.