GENERATING SIMILAR-TO-90 NANOMETER FEATURES USING NEAR-FIELD CONTACT-MODE PHOTOLITHOGRAPHY WITH AN ELASTOMERIC PHASE MASK

Authors
ROGERS JA PAUL KE JACKMAN RJ WHITESIDES GM
Citation
Ja. Rogers et al., GENERATING SIMILAR-TO-90 NANOMETER FEATURES USING NEAR-FIELD CONTACT-MODE PHOTOLITHOGRAPHY WITH AN ELASTOMERIC PHASE MASK, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 59-68
Citations number
16
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
1
Year of publication
1998
Pages
59 - 68
Database
ISI
SICI code
1071-1023(1998)16:1<59:GSNFUN>2.0.ZU;2-#
Abstract
This article describes a near-field photolithographic method that uses an elastomeric phase mask in conformal contact with photoresist. The method is capable of generating similar to 90 nm lines in commercially available photoresist, using broadband, incoherent light with wavelen gths between 330 and 460 nm. Transfer of these patterns into silicon d ioxide and gold demonstrates the integrity of the patterned resist. (C ) 1998 American Vacuum Society.