CHARACTERIZATION OF III-NITRIDE MATERIALS AND DEVICES BY SECONDARY-ION MASS-SPECTROMETRY

Secondary ion mass spectrometry (SIMS) is an excellent technique to ch aracterize III nitride materials and devices (dopants, impurities, and composition). Using empirical standards, the ion yield trends are der ived for III nitride matrices to enable quantitative and high precisio n characterization of both major and impurity elements. The technique can be employed to investigate the control of purity and doping, deter mine growth rate and composition, as well as reveal the structure of f inished optoelectronic and electronic devices. SIMS is thus a powerful tool for failure analysis, reverse engineering, and concurrent engine ering. (C) 1998 American Vacuum Society.