ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION (VOL 15, PG 1008, 1997)/

Authors
FOURRE H PESANT JC SCHULER O CAPPY A
Citation
H. Fourre et al., ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION (VOL 15, PG 1008, 1997)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 255-255
Citations number
1
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
1
Year of publication
1998
Pages
255 - 255
Database
ISI
SICI code
1071-1023(1998)16:1<255:IOALAG>2.0.ZU;2-O