PAPERS FROM THE 4TH INTERNATIONAL WORKSHOP ON THE MEASUREMENT AND CHARACTERIZATION OF ULTRA-SHALLOW DOPING PROFILES IN SEMICONDUCTORS - 6-9APRIL 1997 MCNC, CENTER-FOR-MICROELECTRONICS RESEARCH-TRIANGLE-PARK, NORTH-CAROLINA - PREFACE

Authors
CURRENT M KUMP M MCGUIRE G
Citation
M. Current et al., PAPERS FROM THE 4TH INTERNATIONAL WORKSHOP ON THE MEASUREMENT AND CHARACTERIZATION OF ULTRA-SHALLOW DOPING PROFILES IN SEMICONDUCTORS - 6-9APRIL 1997 MCNC, CENTER-FOR-MICROELECTRONICS RESEARCH-TRIANGLE-PARK, NORTH-CAROLINA - PREFACE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 259-259
Citations number
NO
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
1
Year of publication
1998
Pages
259 - 259
Database
ISI
SICI code
1071-1023(1998)16:1<259:PFT4IW>2.0.ZU;2-G