CHARACTERIZATION OF LOW-ENERGY (100 EV 10 KEV) BORON ION-IMPLANTATION

Low-energy boron implantations between 100 eV and 10 keV are character ized using secondary ion mass spectrometry and electrical measurements of sheet carrier concentrations and sheet resistance, Factors that ma y limit the use elf ion implantation for future generations of semicon ductor devices are discussed, At 1 keV various tilt angles show identi cal channeling behavior, and only a slight difference with an amorphou s implant. It is found that as the energy is lowered from 1 keV to 100 eV much of the reduction in profile depth is canceled out by transien t enhanced diffusion during a rapid thermal anneal, Hall-van der Pauw measurements show that with lower implant energy it becomes more diffi cult to activate the implanted dose. This is possibly due to Increased clustering of boron, but more likely due to the fact that the surface starts to act as a trapping and deactivation center for B. (C) 1998 A merican Vacuum Society.