METAL-OXIDE-SEMICONDUCT OR FIELD-EFFECT TRANSISTOR JUNCTION REQUIREMENTS

The detailed requirements far shallow junctions for deep sub-micron me tal-oxide-semiconductor field-effect transistors are reviewed and expl ained. The National Technology Roadmap for Semiconductors Lists the co ncentration and depth requirements for the next several generations of technology, but does not provide detailed explanation of the electric al requirements that drive these physical junction characteristics. Th ere are actually many more constraints on junction formation in an int egrated complimentary metal-oxide-semiconductor flow, e.g., the effect of the junction formation on the channel region, which can include po ly depletion. boron penetration, and reverse short channel effects. Th e guidelines presented here should be useful to researchers developing ultrashallow junction processes or measurement techniques. (C) 1998 A merican Vacuum Society.