200 EV 10 KEV BORON IMPLANTATION AND RAPID THERMAL ANNEALING - SECONDARY-ION MASS-SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY STUDY

Authors
CURRENT MI LOPES D FOAD MA ENGLAND JG JONES C SU D
Citation
Mi. Current et al., 200 EV 10 KEV BORON IMPLANTATION AND RAPID THERMAL ANNEALING - SECONDARY-ION MASS-SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 327-333
Citations number
26
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
1
Year of publication
1998
Pages
327 - 333
Database
ISI
SICI code
1071-1023(1998)16:1<327:2E1KBI>2.0.ZU;2-7
Abstract
Atomic profiles (secondary ion mass spectroscopy) and cross-section tr ansmission electron microscopy (TEM) images of selectively etched, ann ealed profiles were studied for boron energies from 200 eV to 10 keV a nd rapid thermal processing anneals at 900, 975, and 1050 degrees C. C onsistent variations of dopant depth were obtained over this process r ange. TEM images showed evidence of lateral dopant variation near the edges of poly-Si gate structures, perhaps an effect of lateral straggl ing and reflection of ions from the polymask. (C) 1998 American Vacuum Society.