SHALLOW JUNCTIONS DIFFUSED FROM SINGLE-IMPLANTED AND COIMPLANTED WSI2FILMS AND INTEGRATED 0.2 MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTORTRANSISTORS

Out-diffusion shallow junctions have several advantages for the deep-s ubmicron very large scale integrated technologies. In this work, secon dary ion mass spectrometry profiles of B, P, As, and BF2 are analyzed fur 55 different junctions out-diffused from a WSi2 layer at 800, 850, or 900 degrees C. The results show important diffusion characteristic s depending on various process parameters including implant dose, impl ant energy, and diffusion temperature. The junction depth varies from 50 to 100 nm for all species. In particular, in B and P coimplanted sa mples, a significant retardation of B diffusion in the presence of P i s observed. Based on the experimental results and with the retardation phenomenon, 0.2 mu m complementary metal-oxide-semiconductor transist ors are fabricated with only one lithography step forming the lightly doped drain and source/drain junctions. (C) 1998 American Vacuum Socie ty.