Jj. Kopanski et al., SCANNING CAPACITANCE MICROSCOPY MEASUREMENT OF 2-DIMENSIONAL DOPANT PROFILES ACROSS JUNCTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 339-343
Cross-sectioned p(+)/p and p-n junction test structures were imaged wi
th a scanning capacitance microscope (SCM). To maintain a constant dif
ference capacitance, our SCM utilizes an electronic attenuator circuit
with a dynamic range of 20 V to less than 1 mV. Dopant profiles are e
xtracted from SCM images using a formalism, which rapidly determines t
he theoretical SCM response from a database of calculated C-V curves.
A dopant profile from a p(+)/p junction determined via constant differ
ence capacitance SCM is compared to a secondary ion mass spectroscopy
profile from similar structures.