P. Dewolf et al., CROSS-SECTIONAL NANO-SPREADING RESISTANCE PROFILING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 355-361
The nano-spreading resistance profiling (nano-SRP) method has been dev
eloped and improved such that it can now be used as an accurate tool f
or quantitative two-dimensional carrier profiling. Instrumental improv
ements include the use of batch-fabricated, conducting diamond-coated
silicon probes, and a low-noise logarithmic current amplifier. The spa
tial resolution (10 nm), the dynamic range (10(14)-10(20) atoms/cm(3))
, and the sensitivity (10(14) atoms/cm(3):, of the nano-SRP technique
are illustrated by profiling a wide range of state-of-the-art device s
tructures. Two-dimensional measurements of the carrier distribution in
side fully processed metal-oxide-semiconductor transistors with gate l
engths varying from 2 mu m down to 0.25 mu m illustrate the strength o
f the technique to map present and future devices. The nano-SRP method
currently has sufficient resolution to demonstrate the small asymmetr
y in the source/drain profiles from transistors in which the sample wa
s not rotated during the 7 degrees implant. The electrical transistor
characteristics confirm the nano-SRP results. As another example, the
lateral diffusion of arsenic and phosphorus profiles is studied as a f
unction of implantation conditions. All results are compared with conv
entional one-dimensional techniques (SRP and secondary ion mass spectr
oscopy). (C) 1998 American Vacuum Society.