SECONDARY-ELECTRON IMAGING AS A 2-DIMENSIONAL DOPANT PROFILING TECHNIQUE - REVIEW AND UPDATE

Authors
VENABLES D JAIN H COLLINS DC
Citation
D. Venables et al., SECONDARY-ELECTRON IMAGING AS A 2-DIMENSIONAL DOPANT PROFILING TECHNIQUE - REVIEW AND UPDATE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 362-366
Citations number
7
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
1
Year of publication
1998
Pages
362 - 366
Database
ISI
SICI code
1071-1023(1998)16:1<362:SIAA2D>2.0.ZU;2-7
Abstract
Secondary electron (SE) imaging of semiconductors reveals contrast bet ween n- and p-type areas that call serve as the basis for a two-dimens ional dopant profiling technique. In this article, recent experiments that address sensitivity, spatial resolution, calibration methodology, p/n junction effects, and sample preparation issues are reviewed and discussed for boron doped silicon. In addition, several examples of su ccessful applications of SE imaging as a two-dimensional dopant pro fi ling technique are presented. (C) 1998 American Vacuum Society.