ULTRAHIGH DEPTH RESOLUTION SECONDARY-ION MASS-SPECTROMETRY WITH SUB-KEV GRAZING O-2(+) BEAMS

Compositional analysis of interfaces in semiconductor materials grown with the most modern equipment requires a substantial improvement of t he depth resolution of secondary ion mass spectrometry (SIMS). The low ering of the impact energy to improve depth resolution is limited on m ost magnetic-sector instruments to similar to 1.5 keV. In this work it is shown that in the VG IX70S magnetic-sector instrument a reduction of the impact energy to 600 eV is possible. The reduction is achieved by use of a deceleration electrode in the primary beam line, allowing for independent variation of the energy and the incidence angle theta (50 degrees<theta<80 degrees). The best depth resolution obtained-for a shallow Ge delta layer with a 600 eV theta=80 degrees O-2(+) beam-wa s 1.6 nm full width at half-maximum and an exponential decay length of 0.65 nm; about three times better than achievable on any other magnet ic-sector SIMS instrument. In addition, a very shallow (similar to 3-4 nm) Ge delta layer has been analyzed by high-resolution Rutherford ba ckscattering and SIMS. There is good agreement between both techniques . (C) 1998 American Vacuum Society.