CONSIDERATION OF IN-LINE QUALIFICATION FOR ULTRASHALLOW JUNCTION IMPLANTATION

The electrical characteristics of shallow junction devices are often d ependent on tightly controlled ion implants for their performance and yield. However, concerns exist over the ability of existing in-line me trology tools to accurately verify low energy implants, and therefore, determine whether the ion implanter is in control before committing p roduct to it. This article will explore the capabilities of the Therma -Probe TP500, the Tencor OmniMap RS75, and secondary-ion-mass spectros copy to measure low energy ion implants done on an Applied Materials x R-LEAP with energies 10 keV and below, doses of 1.0E15-3.0E15 cm(-2), and both boron and arsenic species. (C) 1998 American Vacuum Society.