EFFECTS OF P-TOLUIDINE, NONSTOICHIOMETRY, AND DOPING ON THE PHOTOLUMINESCENCE BEHAVIOR OF CDSE AND CDS SINGLE-CRYSTALS

Authors
PETRYKIN VV ODIN IN ZLOMANOV VP ZHANG ZJ
Citation
Vv. Petrykin et al., EFFECTS OF P-TOLUIDINE, NONSTOICHIOMETRY, AND DOPING ON THE PHOTOLUMINESCENCE BEHAVIOR OF CDSE AND CDS SINGLE-CRYSTALS, Inorganic materials, 34(2), 1998, pp. 93-98
Citations number
13
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
34
Issue
2
Year of publication
1998
Pages
93 - 98
Database
ISI
SICI code
0020-1685(1998)34:2<93:EOPNAD>2.0.ZU;2-L
Abstract
The photoluminescence intensity of CdSe and CdS crystals is found to b e sensitive to carrier concentration, doping with germanium or silicon , and the concentration of p-toluidine, a Lewis base, in toluene. The constant of p-toluidine adsorption onto the crystal surface is also fo und to depend on carrier concentration.