MIXED-SIGNAL INTEGRATED-CIRCUITS BASED ON GAAS HEMTS

Authors
THIEDE A WANG ZG SCHLECHTWEG M LANG M LEBER P LAO ZH NOWOTNY U HURM V RIEGERMOTZER M LUDWIG M SEDLER M KOHLER K BRONNER W HORNUNG J HULSMANN A KAUFEL G RAYNOR B SCHNEIDER J JAKOBUS T SCHROTH J BERROTH M
Citation
A. Thiede et al., MIXED-SIGNAL INTEGRATED-CIRCUITS BASED ON GAAS HEMTS, IEEE transactions on very large scale integration (VLSI) systems, 6(1), 1998, pp. 6-17
Citations number
54
Categorie Soggetti
Computer Science Hardware & Architecture","Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture
Journal title
IEEE transactions on very large scale integration (VLSI) systems → ACNP
ISSN journal
10638210
Volume
6
Issue
1
Year of publication
1998
Pages
6 - 17
Database
ISI
SICI code
1063-8210(1998)6:1<6:MIBOGH>2.0.ZU;2-1
Abstract
During the past five gears numerous mixed signal integrated circuits ( IC's) have been designed, processed, and characterized based on our 0. 2 mu m gate length AlGaAs/GaAs quantum well HEMT technology, Utilizing the inherent advantages of the AlGaAs/GaAs material system, optical, analog, microwave, and digital functions have been integrated monolith ically. Examples are a chip set for 30 Gb/s optoelectronic data transm ission systems, 15 and 34 GHz PLL's, a 35 GHz phase shifter for phased array antenna applications, a 2-kb ROM with subnanosecond access time for direct digital signal synthesis, and a 6-k gate array.