PROCESS INTEGRATION OF AN INTERLEVEL DIELECTRIC (ILDO) MODULE USING ABUILDING-IN RELIABILITY APPROACH

Citation
Re. Paulsen et al., PROCESS INTEGRATION OF AN INTERLEVEL DIELECTRIC (ILDO) MODULE USING ABUILDING-IN RELIABILITY APPROACH, I.E.E.E. transactions on electron devices, 45(3), 1998, pp. 655-664
Citations number
24
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
45
Issue
3
Year of publication
1998
Pages
655 - 664
Database
ISI
SICI code
0018-9383(1998)45:3<655:PIOAID>2.0.ZU;2-J
Abstract
Process integration is approached from a built-in reliability perspect ive in order to develop a pre-metal1 interlevel dielectric (ILDO) modu le which may be integrated into a submicron CMOS process with embedded nonvolatile memory, The approach involves developing a fundamental un derstanding of the process parameters that modulate parasitics and imp act reliability. The benefit of such an approach is a relatively simpl e process integration while achieving a highly manufacturable and reli able process, Several ILDO films have been characterized to understand the physical and chemical composition, process parameter dependencies , and gettering properties in order to define a process window from wh ich to integrate the most manufacturable process.