GROWTH AND STRUCTURE OF THIN PT2SI AND PTSI LAYERS ON SI(111) AND SI(001) CHARACTERIZED WITH IN-SITU GRAZING-INCIDENCE DIFFRACTION

The growth of thin platinum silicide layers on Si(111) and (001) surfa ces was studied with in situ grazing incidence diffraction and X-ray r eflectivity measurements during the annealing process. The interface r oughnesses, layer thicknesses, structures and orientations of the thre e phases, Pt, Pt2Si and PtSi, were identified and their temperature de pendencies observed. In the case of PtSi on Si(111), a plane reaction front was found, growing from the Si substrate towards the sample surf ace and forming an epitactic PtSi layer. In contrast, PtSi on Si(001) grows upwards locally and forms 'islands' of polycrystalline material on the Si surface.