AG N-GAAS SCHOTTKY MIS DIODES WITH SURFACE INSULATING LAYERS PREPAREDUSING (NH4)(2)S SOLUTIONS WITHOUT WATER/

A study of the Schottky barrier height (SBH) and the ideality factor n was made using results of the temperature dependence of the experimen tal forward and reverse bias current-voltage (I-V) characteristics of Ag/n-GaAs MIS diodes. The diodes were fabricated on n-GaAs substrates utilizing insulating layers formed with dipping and anodic sulfidizati on methods. The sulfide-insulating layer was obtained using a (NH4)(2) S solution with propylene glycol, but without water. The Ag/n-GaAs MIS diode with a sulfide-insulating layer was found to cause a variation in Schottky barrier height (0.66 eV). The role of the sulfide-treatmen t or the sulfide layer on the GaAs surface in modifying the SBDs is mo st likely in the increase of interface stability of the treated surfac e which retards interfacial reactions between metal and semiconductor. (C) 1998 Elsevier Science Ltd.