HOT-CARRIER EFFECTS IN DEEP-SUBMICRON BULK SILICON MOSFETS

The aim of this article is to give a thorough analysis of the hot carr ier effects in bulk Si MOSFETs. The gate I-g and substrate I-b current s are investigated in a wide range of applied biases (gate, drain and substrate), gate length (from 0.8 down to 0.1 mu m) and temperature (d own to near liquid helium). Substantial differences between the variat ions of I-b and I-g with temperature and applied biases are highlighte d. These observations show that the physical mechanisms responsible fo r these two currents are substantially different in a wide channel len gth range. The substrate current is created by low energy carriers hea ted by the pinch-off electric field, whereas the gate current is induc ed by high energy carriers caused by the secondary heating at the drai n-substrate junction. (C) 1998 Elsevier Science Ltd.