HIGH-PRECISION, LOW-COST MASK FOR DEEP X-RAY-LITHOGRAPHY

The precision of transferred patterns are highly dependent on the qual ity of the mask in deep x-ray lithography. Many parameters, such as th e critical energy of the synchrotron light, beamline optics and even t he microstructure to be exposed should be considered in mask design. I n this paper, the design rules and the boundary conditions for deep x- ray mask are discussed in general. The method of making a precision, m ultilayer mask using UV lithography technique is also described.