X-RAY MASKS FOR VERY DEEP X-RAY-LITHOGRAPHY

Citation
J. Klein et al., X-RAY MASKS FOR VERY DEEP X-RAY-LITHOGRAPHY, Microsystem technologies, 4(2), 1998, pp. 70-73
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
ISSN journal
09467076
Volume
4
Issue
2
Year of publication
1998
Pages
70 - 73
Database
ISI
SICI code
0946-7076(1998)4:2<70:XMFVDX>2.0.ZU;2-Q
Abstract
The high aspect ratio, deep x-ray lithography and electrodeposition pr ocess [Becker et al. (1986)] can be expensive unless throughput is hig h enough. The use of a very high energy synchrotron has allowed the co st of exposure to be significantly reduced through simultaneous exposu re of stacked photoresist [Guckel et al (1994)]. Synchrotron radiation at high photon energies has resulted the use of a large area x-ray ma sk, Both stacked exposures and a large area x-ray masks have significa ntly increased the throughput of the deep x-ray lithography and electr odeposition process.