LOW-RESISTANCE VERTICAL CONDUCTION ACROSS EPITAXIALLY LIFTED-OFF N-GAAS FILM AND PD GE/PD COATED SI SUBSTRATE/

Low-resistance ohmic conduction across an epitaxially lifted-off(ELO) thin n-GaAs film and a Si substrate was obtained by attaching the ELO film on the Si substrate coated with a Pd/Ge/Pd multilayer. Good bondi ng and ohmic contacts to both GaAs and Si were achieved at the same ti me after annealing. The interface compound formation was studied by se condary ion mass spectroscopy and x-ray diffraction analyses. This ELO technology was used to fabricate an ELO stripe geometry diode laser o n Si with the back-side contact on Si substrate. Good laser performanc e with comparable characteristics as conventional laser diodes on GaAs substrates was obtained.