DEPENDENCE OF ACTIVATION-ENERGY OF MASS-TRANSPORT LIMITED REGION ON THE PHOTOSPECTRUM OF PHOTONS PARTICIPATING IN RAPID PHOTOTHERMAL ASSISTED CHEMICAL-VAPOR-DEPOSITION

In this letter, we demonstrate the importance of high energy photons ( lambda < 800 nm) in reducing the activation energy and providing highe r growth rates and low defect densities for the materials deposited by rapid photothermal processing assisted chemical vapor deposition (CVD ). The dependence of growth rate, structural properties, and electrica l properties of Y2O3/Si structure on the photospectrum reaching at the Y2O3/Si interface has been studied. The observation that high energy photons result in the reduction of activation energy of mass transport limited region has direct advantage of depositing various electronic materials by CVD at low processing temperatures.