THERMAL-OXIDATION OF INDIUM-PHOSPHIDE IN THE PRESENCE OF CERIUM OXYCHLORIDE DERIVATIVES

Authors
MITTOVA IY TOMINA EV ANTIPKO SL
Citation
Iy. Mittova et al., THERMAL-OXIDATION OF INDIUM-PHOSPHIDE IN THE PRESENCE OF CERIUM OXYCHLORIDE DERIVATIVES, Inorganic materials, 34(3), 1998, pp. 201-202
Citations number
6
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
34
Issue
3
Year of publication
1998
Pages
201 - 202
Database
ISI
SICI code
0020-1685(1998)34:3<201:TOIITP>2.0.ZU;2-1
Abstract
Thermal oxidation of indium phosphide in the presence of cerium(III) c hloride was studied by ultrasoft x-ray and IR absorption spectroscopic measurements. The resultant oxide films are found to contain In2O3, I nPO4, and phosphorus. The accelerated formation of indium phosphate is due to reaction of the InP substrate with the CeO2 forming during the preparation of the additive. The films contain small amounts of ceriu m and exhibit low dielectric strength.