SEMIQUANTITATIVE SUBPLANTATION MODEL FOR LOW-ENERGY ION INTERACTIONS WITH SOLID-SURFACES - III - ION-BEAM HOMOEPITAXY OF SI

The semiquantitative subplantation model developed in article I [K. J. Boyd, D. Marton, J. W. Rabalais, S. Uhlmann, and Th. Frauenheim, J. V ac. Sci. Technol. A 16, 444 (1998)] is used to describe the homoepitax ial growth of Si{100} films by low energy ion beam deposition. The mod el successfully describes the epitaxial quality of films grown at a va riety of ion energies and substrate temperatures. Density functional m olecular dynamics simulations are used to calculate threshold energies and cross sections for penetration of ions into the target lattice. T hese calculated values, used in conjunction with the model, yield good agreement with recently published experimental data for homoepitaxy b y direct deposition of low energy Si+ ions. The model also provides a simple qualitative explanation of the limiting epitaxial thickness in molecular beam epitaxy and the success of epitaxial Si deposition by o ther hyperthermal particle methods. New insight into the atomic-level behavior of epitaxial film growth from hyperthermal particles is obtai ned from these applications. (C) 1998 American Vacuum Society.