HIGH-ENERGY ALUMINUM ION-IMPLANTATION USING A VARIABLE-ENERGY RADIO-FREQUENCY QUADRUPOLE IMPLANTER

A high energy aluminum ion implantation using a variable energy radio frequency quadrupole (RFQ) implanter has been studied for the fabricat ion of high power semiconductor devices, The implanter consists of a m icrowave ion source with a crucible for AlCl3 sublimation, a sector ty pe mass separator, a magnetic quadrupole triplet, a variable energy fo ur-rod RFQ linac as an additional accelerator, an energy analyzer, and an implantation chamber. Al2+ ions, with energies of 1.0 MeV and 0.9 MeV, are implanted into a 6-inch diameter wafer, and the depth profile and dose uniformity are measured by secondary ion mass spectroscopy a nd sheet resistivity, respectively. Results show that the depth profil e has the desired features for the projected range, and the dose non-u niformity is 0.7%. (C) 1998 American Vacuum Society.