Mk. Olsson et al., HIGH-RATE REACTIVE DE MAGNETRON SPUTTER-DEPOSITION OF AL2O3 FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 639-643
Citations number
21
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Aluminum oxide films were produced by reactive de magnetron sputtering
of Al in Ar+O-2. The composition of the films was characterized by Ru
therford backscattering measurements. Stoichiometric films possessed e
xcellent optical properties with a refractive index of similar to 1.6
for visible and near-infrared light. It was possible to produce stoich
iometric films while keeping the target in the metallic mode of operat
ion; the resulting deposition rate was 23 nm min(-1), as compared to 0
.95 nm min(-1) for films grown from an oxidized target. An O/Al arriva
l rate ratio exceeding similar to 17 was required for stoichiometric f
ilms to be grown at room temperature. The success of the present high-
rate deposition strategy hinges on the use of a suitable deposition sy
stem geometry--including a large target-to-substrate distance and a sm
all target size--and on the use of sufficient Ar pressure. Monte Carlo
simulations are presented; they can be reconciled with our empirical
data. (C) 1998 American Vacuum Society.