GAS-PHASE-REACTION-CONTROLLED ATOMIC-LAYER-EPITAXY OF SILICON

Authors
HASUNUMA E SUGAHARA S HOSHINO S IMAI S IKEDA K MATSUMURA M
Citation
E. Hasunuma et al., GAS-PHASE-REACTION-CONTROLLED ATOMIC-LAYER-EPITAXY OF SILICON, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 679-684
Citations number
36
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
16
Issue
2
Year of publication
1998
Pages
679 - 684
Database
ISI
SICI code
0734-2101(1998)16:2<679:GAOS>2.0.ZU;2-I
Abstract
Atomic layer epitaxy of silicon has been studied by alternating exposu res of atomic hydrogen and SiH2Cl2. An ideal growth rate of 1 monolaye r per cycle has been achieved with a wide temperature window from 550 degrees C to 610 degrees C under long SiH2Cl2 residence time and high pressure conditions. These requirements seem to come from the generati on of dense SiHCl, the desirable precursor, by gas-phase reaction of S iH2Cl2. (C) 1998 American Vacuum Society.