LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY OF COHERENT INGAASP INP AND INGAASP/INASP MULTILAYERS ON INP(001)/

InGaAsP/InP and InGaAsP/InAsP multilayers were grown on InP(001) by lo w-pressure organometallic vapor phase epitaxy. Large growth rates of a pproximate to 0.4-0.6 nm s(-1) and an increased element-V overpressure were used to limit the morphological evolution of the strained layers during growth and to compensate for the relatively high temperatures (approximate to 630 degrees C) necessary for vapor phase epitaxy in a diffusion-limited regime. High-resolution x-ray diffraction and recipr ocal lattice mapping analyses indicate fully strained multilayers of h igh crystalline quality. This structural information, combined with ro om-temperature photoluminescence (PL) measurements, allows us to deter mine accurately the thickness and the composition of the layers. Well- resolved excitonic transitions between the heavy- and light-hole valen ce bands and the conduction band are visible in the low-temperature op tical absorption spectra for compressive InGaAsP/InP multilayers. The PL spectra for compressive InGaAsP/InP structures show sharp and inten se transitions between the first confined levels in the conduction and the heavy-hole bands. The PL peaks for InGaAsP/InAsP heterostructures are slightly broader than for InGaAsP/InP multilayers due to the more complex (quaternary-ternary) interface but remain sharp and intense. (C) 1998 American Vacuum Society. [S0734-2101(98)05002-7].