QUANTUM-WELL INTERMIXING IN MATERIAL SYSTEMS FOR 1.5 MU-M (INVITED)

Precise control over local optical and electrical characteristics acro ss a semiconductor wafer is a fundamental requirement for the fabricat ion of photonic integrated circuits. Quantum well intermixing is one a pproach, where the band gap of a quantum well structure is modified by intermixing the well and barrier layers. Here we report recent progre ss in the development of intermixing techniques for long wavelength ap plications, discussing two basic techniques. The first is a class of l aser disordering techniques which take place in the solid state. The s econd is a novel intermixing technique involving plasma induced damage . Both techniques enable large band gap shifts to be achieved in stand ard GaInAsP multiple quantum well laser structures. The potential of b oth techniques for photonic integration is further demonstrated by the fabrication and characterisation of extended cavity lasers. (C) 1998 American Vacuum Society. [s0734-2101(98)04602-8].