TRITIATED AMORPHOUS-SILICON FILMS AND DEVICES

The de saddle-field glow discharge system was used to stably bond trit ium in hydrogenated amorphous silicon films. A betavoltaic battery is demonstrated using tritiated-hydrogenated amorphous silicon as the int rinsic layer in a p-i-n diode and betaconductivity was observed in a-S i:H:T films. Although the half-life of tritium is 12.5 years, the deca y of tritium appeared to rapidly increase the midgap density of states which decreased the excess carrier lifetime and decreased the power f rom the betavoltaic battery. The betaconductivity properties of the a- Si:H:T film were also affected. (C) 1998 American Vacuum Society. [S07 34-2101(98)08002-6].