SIMULATION AND MEASUREMENT OF MULTIPLICATION IN THIN-FILM ELECTROLUMINESCENT DEVICES WITH DOPED PROBE LAYERS

Citation
K. Neyts et D. Corlatan, SIMULATION AND MEASUREMENT OF MULTIPLICATION IN THIN-FILM ELECTROLUMINESCENT DEVICES WITH DOPED PROBE LAYERS, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 768-777
Citations number
32
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
45
Issue
4
Year of publication
1998
Pages
768 - 777
Database
ISI
SICI code
0018-9383(1998)45:4<768:SAMOMI>2.0.ZU;2-A
Abstract
When a single voltage pulse is applied to an electroluminescent (EL) d evice after previous illumination, the current through the phosphor la ver will normally not be homogeneous, hut increase from the cathodic s ide-where the electrons tunnel from-to the anodic side, due to multipl ication. The positive charges that remain after the multiplication pro cess cause a positive space charge that has been observed in various e xperiments and in influences the efficiency. In this paper a simple nu merical model is proposed for the calculation of charge transfer and l ight emission, in the cast? that multiplication takes place during a v oltage pulse after previous illumination.