DEVELOPMENT OF A NOVEL IMAGE INTENSIFIER OF AN AMPLIFIED METAL-OXIDE-SEMICONDUCTOR IMAGER OVERLAID WITH ELECTRON-BOMBARDED AMORPHOUS-SILICON

We developed a novel image intensifier (II) of an amplified metal-oxid e-semiconductor (MOS) images (AMI) overlaid with electron-bombarded (E B) amorphous silicon (a-Si), The electron bombardment gain (EB gain) t t-as 1500 at an accelerating voltage of 10 BV. Since the multiplicatio n process was free from a phosphorescent screen and a coupling fiber p late as in the conventional IF, the: resolution was high and the pictu re quality was good and free from granularity noises, white spats, lag and sticking. As for fatigue of X-ray irradiation, the contrasts of a vertical stripe (Smear) are not detectable and damaged areas in AMI a re weak whereas both of those in charge-coupled devices (CCD's) are st rong.